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| TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP) TO-92 FEATURES High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg RJA RJC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, junction to Ambient Thermal Resistance, unction to Case Value -300 -300 -5 -500 625 150 -55-150 200 83.3 Units V V V mA mW /mW /mW conditions 1.EMITTER 2.BASE 3.COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT Test MIN -300 -300 -5 -0.25 -0.1 60 80 60 -0.2 -0.9 50 V V MHz 250 TYP MAX UNIT V V V A A IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100A, IC=0 VCB= -200 V VEB= -5 V, IC=0 VCE= -10 V, IC=- 1 mA VCE= -10V, IC = -10 mA VCE= -10 V, IC= -80 mA IC= -20 mA, IB= -2 mA IC= -20 mA, IB= -2 mA VCE= -20 V, IC= -10 mA f = 30MHz IE=0 CLASSIFICATION OF hFE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250 |
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